全椒亚格泰电子新材料科技有限公司
三甲基硅烷Trimethylsilane主要用于制造半导体器件的薄膜电介质时化学气相淀积的硅源气体， 可在薄膜电介质上淀积碳化硅、 氧化硅或氮化硅， 是等离子体增强化学气相沉积（ PECVD） 工业的重要原料， 常用PECVD的保护涂层以及镶嵌金属化应用中的低k介电层和阻挡层的PECVD工艺。
Technical specification
Trimethylsilane
CAS-No: |
993-07-7 |
UN No: |
3161 |
Chemical formula: (CH3)3 Si
Appearance:
Colorless gas with a slight odor, stable at room temperature and atmospheric pressure.
Type:
Electronic pure 5N
Stability and reactivity:
May decompose to silicon carbide and hydrogen at high temperatures (above 500 oC)
Composition:
Substance name |
Content |
|
Trimethylsilane |
99,999 |
% |
Hydrocarbons total, not more |
1 |
ppm |
Nitrogen, not more |
1 |
ppm |
Chlorides total, not more |
1 |
ppm |
Carbon dioxide, not more |
1 |
ppm |
Oxygen Argon, not more |
2 |
ppm |
Carbon monoxide, not more |
2 |
ppm |
Water, not more |
1 |
ppm |
Physical properties (reference data):
Molecular weight |
74,20 |
g/mole |
Densityat 20 |
0,638 |
kg/m3 |
Melting point |
-135,9 |
|
Boiling point |
6,7 |
|
Freezing point |
- 135,9 |
|
Major Hazards |
Flammable |
Additional information (properties):
- Non corrosive;
- Non pyrophorus;
- Non radio-active;
- LC50 = 9600 ppm/1h
