货号 | CAS号 | 编号 | 包装 | 参数 | 库存 | 补货期 | 价格 |
BK2020072801-01 | BK2020072801 | 高纯 | 100 | 650 | |||
BK2020072801-02 | BK2020072801 | 超高纯 | 100 | 1300 |
产品名称: 晶体种类: |
Bi2Te3 碲化铋 (1g) 拓扑绝缘体,红外材料 |
纯度: | 99.999 % |
表征方法: | EDS,SEM,Raman |
禁带宽度: | 0.3ev |
1,Yao, Jiandong, Zhaoqiang Zheng, and Guowei Yang. "All‐layered 2D optoelectronics: a high‐performance UV–vis–NIR broadband SnSe photodetector with Bi2Te3 topological insulator electrodes."Advanced Functional Materials27.33 (2017): 1701823.
2,Mamur, Hayati, et al. "A review on bismuth telluride (Bi2Te3) nanostructure for thermoelectric applications."Renewable and Sustainable Energy Reviews82 (2018): 4159-4169.
3,Ambrosi, Adriano, et al. "Exfoliation of layered topological insulators Bi2Se3 and Bi2Te3 via electrochemistry."ACS nano10.12 (2016): 11442-11448.
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