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碳化硅衬底外延石墨烯

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  • ≥ 64 起订量
  • 10000平方毫米 总供应
  • 江苏 苏州 所在地
苏州凯发新材料科技有限公司
产品详情


货号 CAS号 编号 包装 参数 库存 补货期 价格
BK100048 7440-44-0 BK100048 8*8mm 100 0


产品照片:

A high-quality epitaxial monolayer graphene is fabricated on Si-face of semi-insulating, transparent {0001} 4H-SiC substrates via solid-state graphitization. During the sublimation process, a specific buffer layer that has a distorted graphene-like structure forms between the graphene film and the underlying SiC substrate. Both the substrate and the buffer layer influence the electronic properties, resulting in intrinsic n-doping of the epitaxially grown monolayer graphene.

Note: Graphene side is facing up in the box. Take precaution while handling the sample to avoid any damage to the film.

Key Features:

Excellent carrier mobility

Controlled growth of Graphene layers

Better purity of the samples

Potential scalable method for graphene fabrication

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