货号 | CAS号 | 编号 | 包装 | 参数 | 库存 | 补货期 | 价格 |
BKTMDC010366-01 | BKTMDC010366 | 1片 | 100 | 858 | |||
BKTMDC010366-02 | BKTMDC010366 | 2片 | 100 | 1573 | |||
BKTMDC010366-03 | BKTMDC010366 | 5片 | 100 | 3575 | |||
BKTMDC010366-04 | BKTMDC010366 | 10片 | 100 | 6435 | |||
BKTMDC010366-05 | BKTMDC010366 | 20片 | 100 | 11440 |
h-BN晶体尺寸达到2mm,h-BN薄片无缺陷产生,可以用作高性能2D电子和光子器件的2D绝缘模板的商用h-BN薄片。
六方氮化硼(h-BN)晶体非常适合作为2D材料的基板。h-BN晶体是高度结晶的,在1566cm-1处显示出强拉曼峰,FWHM小于5cm-1,显示5.2 eV带隙,被认为是宽带隙半导体/绝缘体。
Our h-BN crystals reach to 2mm in size and are considered as gold standard in 2D materials field. h-BN flakes are produced defect free which is the only commercial h-BN flake used as 2D insulating template for high performance 2D electronic and photonic devices.For an economical alternative please see our new product h-BN Flake Powder.Hexagonal boron nitride (h-BN) single crystals are ideal as a substrate for 2D materials. h-BN crystals are highly crystalline display strong Raman peak at 1566 cm-1 with FWHM less than 5cm-1. It displays 5.2 eV band gap and is considered wide-band gap semiconductor / insulator. Chemically inert, atomically flat.
应用领域:
电子产品;传感器-探测器;STM–AFM应用程序;超低摩擦研究(摩擦学);材料科学与半导体研究
Applicationfields:
Electronics;Sensors - detectors;STM – AFM applications;Ultra-low friction studies (tribology);Materials science and semiconductor research