苏州凯发新材料科技有限公司
货号 | CAS号 | 编号 | 包装 | 参数 | 库存 | 补货期 | 价格 |
BK2020052901-01 | BK2020052901 | 10平方毫米 | 100 | 1683 | |||
BK2020052901-02 | BK2020052901 | 25平方毫米 | 100 | 2548 | |||
BK2020052901-03 | BK2020052901 | 100平方毫米 | 100 | 5850 |
晶体大小: | 3~10 mm |
晶体种类: | Magnetic semiconductor,红外半导体,拓扑材料,热电材料 |
纯度: | 99.999 % |
表征方法: | EDS,SEM,Raman |
bandgap: | 0.4 eV |
更多信息: | 请咨询:tztczj@163.com |
参考文献:
1,Fu, Qundong, et al. "Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates."Advanced Materials31.1 (2019): 1804945.
2,Ying, Jianghua, et al. "Magnitude and spatial distribution control of the supercurrent in Bi2O2Se-based Josephson junction."Nano Letters(2020).
3,Zhang, Ziyang, et al. "Truly Concomitant and Independently Expressed Short‐and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor."Advanced Materials31.3 (2019): 1805769.
4,Tan, Xing, et al. "Synergistical Enhancement of Thermoelectric Properties in n‐Type Bi2O2Se by Carrier Engineering and Hierarchical Microstructure."Advanced Energy Materials9.31 (2019): 1900354.