苏州凯发新材料科技有限公司
| 货号 | CAS号 | 编号 | 包装 | 参数 | 库存 | 补货期 | 价格 |
| BK2020081715-01 | BK2020081715 | 单抛 | 厚度：[1,2)μm | 100 | 3000 | ||
| BK2020081715-02 | BK2020081715 | 单抛 | 厚度：[2,3)μm | 100 | 3240 | ||
| BK2020081715-03 | BK2020081715 | 单抛 | 厚度：[3,4)μm | 100 | 3480 | ||
| BK2020081715-04 | BK2020081715 | 单抛 | 厚度：[4,5)μm | 100 | 3600 | ||
| BK2020081715-05 | BK2020081715 | 双抛 | 厚度：[1,2)μm | 100 | 3360 | ||
| BK2020081715-06 | BK2020081715 | 双抛 | 厚度：[2,3)μm | 100 | 3600 | ||
| BK2020081715-07 | BK2020081715 | 双抛 | 厚度：[3,4)μm | 100 | 3840 | ||
| BK2020081715-08 | BK2020081715 | 双抛 | 厚度：[4,5)μm | 100 | 3960 |
性能参数：
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Item AlN-T-C-C50 Dimension Ф 50.8 ± 0.2 mm Thickness/Thickness STD 1-5μm±10%/3% Orientation of AIN C-plane (0001) off angle toward A-axis 0.2±0.1° Orientation Flat of AIN （1-100）0±0.2°，16±1mm Conduction Type Semi-Insulating XRD Crystal Quality [1,2)μm [2,3)μm [3,4)μm [4,5)μm (0002)FWHM(arcsec) ≤80 ≤100 ≤120 ≤160 (10-12)FWHM(arcsec) ≤650 ≤550 ≤450 ≤400 Structure ~1-5AIN/~20nm AIN buffer/430±25μm sapphire Edge Exclusion ≤2.5μm Through Crack None Orientation of sapphire C plane(0001) off angle toward M-axis 0.2±0.1° Orientation Flat of sapphire (11-20)0±0.2°，16±1mm
Sapphire Polish Single side polished(SSP)/Double side polished (DSP) Package Packagesd in a cleanroom in containers
